ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY

ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY

Author(s):

Shibata, H.

Publication title:

Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

163

Pub. Year:

1990

Page(from):

121

Page(to):

126

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990517 [1558990518]

Language:

English

Call no.:

M23500/163

Type:

Conference Proceedings

Details

TDL ID:	ZA00015647
Series ID:	PA00000011
Conf. info. (Name):	Symposium on impurities, defects, and diffusion in semiconductors
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.01

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