ELECTRICAL PROPERTIES OF MBE-GROWN HgCdTE

ELECTRICAL PROPERTIES OF MBE-GROWN HgCdTE

Author(s):

Publication title:

Properties of II-VI semiconductors : bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

161

Pub. Year:

1990

Page(from):

245

Page(to):

250

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990494 [1558990496]

Language:

English

Call no.:

M23500/161

Type:

Conference Proceedings

Details

TDL ID:	ZA00015645
Series ID:	PA00000011
Conf. info. (Name):	Symposium on properties of II-VI semiconductors
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.02

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