X-RAY DIFFRACTION STUDY OF InA1As-InGaAs ON InP HIOGH ELECTRON MOBILITY TRANSISTOR STRUCTURE PREPARED BY MOLECULAR BEAM EPITAXY

X-RAY DIFFRACTION STUDY OF InA1As-InGaAs ON InP HIOGH ELECTRON MOBILITY TRANSISTOR STRUCTURE PREPARED BY MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

160

Pub. Year:

1990

Page(from):

771

Page(to):

776

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990487 [1558990488]

Language:

English

Call no.:

M23500/160

Type:

Conference Proceedings

Details

TDL ID:	ZA00015644
Series ID:	PA00000011
Conf. info. (Name):	Symposium on layered structures
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.01

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