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EFFECT OF STOICHIOMETRY ON THE ACTIVATION OF IMPLANTED Si IN MBE-GROWN GaAs ON Si

Author(s):
Publication title:
Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
160
Pub. Year:
1990
Page(from):
475
Page(to):
480
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990487 [1558990488]
Language:
English
Call no.:
M23500/160
Type:
Conference Proceedings

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