GROWTH AND EPITAXIAL CoSi2 AND NiSi2 ON (111), (100) AND (110) Si AT ROOM TEMPERATURE

GROWTH AND EPITAXIAL CoSi2 AND NiSi2 ON (111), (100) AND (110) Si AT ROOM TEMPERATURE

Author(s):

Publication title:

Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

160

Pub. Year:

1990

Page(from):

243

Page(to):

248

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990487 [1558990488]

Language:

English

Call no.:

M23500/160

Type:

Conference Proceedings

Details

TDL ID:	ZA00015644
Series ID:	PA00000011
Conf. info. (Name):	Symposium on layered structures
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1989.11.27-1989.12.01

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