EFFECT OF ANNEALING ON STRAINED InGaAs/GaAs QUANTUM WELLS
- Author(s):
- Publication title:
- Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 160
- Pub. Year:
- 1990
- Page(from):
- 147
- Page(to):
- 152
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990487 [1558990488]
- Language:
- English
- Call no.:
- M23500/160
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
ROOM TEMPERATURE OPTICAL STUDIES OF GaAs/AlGaAs COUPLED DOUBLE QUANTUM WELLS
Materials Research Society |
2
Conference Proceedings
GaAs/A1GaAs QUANTUM WELL MIXING USING LOW ENERGY ION IMPLANTATION AND RAPID THERMAL ANNEALING
Materials Research Society |
Materials Research Society |
Materials Research Society |
9
Conference Proceedings
CRITICAL THICKNESS OF GaAs/InGaAs AND A1GaAs/GaAsP QUANTUM WELLS GROWN BY ATMOSPHERIC PRESSURE OMCVD
Materials Research Society |
4
Conference Proceedings
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF STRAINED InGaAs/GaAs QUANTUM WELLS
Materials Research Society |
10
Conference Proceedings
TEMPERATURE DEPENDENT AND TIME RESOLVED OPTICVAL STUDIES OF SINGLE QUANTUM WELLS PRODUCED BY INTERRUPTED GROWTH MBE
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |