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THE INITIAL STAGES OF MBE GROWTH OF InSb ON GaAs (100) - A HIGH MISFIT HETEROINTERFACE

Author(s):
Publication title:
Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
159
Pub. Year:
1990
Page(from):
63
Page(to):
68
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990470 [155899047X]
Language:
English
Call no.:
M23500/159
Type:
Conference Proceedings

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