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EXPERIMENTAL AND THEORETICAL ANALYSIS OF RESONANT TUNNELING THROUGH a-Si:H/a-Si1-XCX:H DOUBLE-BARRIER IN p-i-n STRUCTURE

Author(s):
Publication title:
Amorphous silicon technology, 1989 : symposium held April 25-28, 1989, San Diego, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
149
Pub. Year:
1989
Page(from):
687
Page(to):
692
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990227 [1558990224]
Language:
English
Call no.:
M23500/149
Type:
Conference Proceedings

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