ELECTRON TRAPPING PROPERTIES OF SILICON NITRIDE DETERMINED BY AVALANCHE INJECTION

ELECTRON TRAPPING PROPERTIES OF SILICON NITRIDE DETERMINED BY AVALANCHE INJECTION

Author(s):

Publication title:

Amorphous silicon technology, 1989 : symposium held April 25-28, 1989, San Diego, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

149

Pub. Year:

1989

Page(from):

551

Page(to):

556

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990227 [1558990224]

Language:

English

Call no.:

M23500/149

Type:

Conference Proceedings

Details

TDL ID:	ZA00015634
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1989
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1989.04.25-1989.04.28

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