EFFECT OF STRAIN AND INTERFACE INTERDIFFUSION ON THE VALENCE BAND OFFSET AT Si/Ge INTERFACES

EFFECT OF STRAIN AND INTERFACE INTERDIFFUSION ON THE VALENCE BAND OFFSET AT Si/Ge INTERFACES

Author(s):: Hybertsen, Mark S.
Publication title:: Chemistry and defects in semiconductor heterostructures
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 148
Pub. Year:: 1989
Page(from):: 329
Page(to):: 334
Pages:: 6
Pub. info.:: Pittsburgh, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9781558990210 [1558990216]
Language:: English
Call no.:: M23500/148
Type:: Conference Proceedings

Details

TDL ID:	ZA00015633
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Chemistry and Defects in Semiconductor Heterostructures ; MRS Spring Meeting
Conf. info. (Number):	1989
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1989.04.24-1989.04.27

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