EPITAXIAL GROWTH OF NiSi2 AND GoSi2 ON LATERALLY CONFINED SILICON BY RAPID THERMAL ANNEALING
- Author(s):
- Publication title:
- Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 146
- Pub. Year:
- 1989
- Page(from):
- 223
- Page(to):
- 228
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990197 [1558990194]
- Language:
- English
- Call no.:
- M23500/146
- Type:
- Conference Proceedings
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