OUTDIFFUSION OF MAGNESIUM FROM Mg+ IMPLANTED GaAs
- Author(s):
- Publication title:
- Advances in materials, processing, and devices in III-V compound semiconductors
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 144
- Pub. Year:
- 1989
- Page(from):
- 451
- Page(to):
- 456
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990173 [1558990178]
- Language:
- English
- Call no.:
- M23500/144
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
CHANNELING OF SHALLOW Si IMPLANTS INTO GaAs AS A FUNCTION OF TILT AND ROTATION ANGLES
Materials Research Society |
7
Conference Proceedings
RELATIONSHIP BETWEEN CRYSTAL DEFECTS, Ge OUTDIFFUSION AND V/III RATIO IN MOVPE GROWN (001) GaAs/Ge
MRS - Materials Research Society |
2
Conference Proceedings
CARBON INCORPORATION IN METAL ORGANIC VAPOR PHASE EPITAXY GROWN GaAs USING CHYX1-Y, TMG, AND AsH3
Materials Research Society |
Materials Research Society |
3
Conference Proceedings
Shallow Junction Fabrication by Rapid Thermal Outdiffusion from Implanted Oxide
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS-Materials Research Society |
Materials Research Society |
Materials Research Society |
12
Conference Proceedings
EFFECTS OF INDIUM PREAMORPHIZATION ON BORON IMPLANTED SILICON ANNEALED BY RTA
Materials Research Society |