HEAVILY-DOPED n+-GaAs WITH LOW COMPENSATION GROWN BY ATMOSPHERIC OMVPE

HEAVILY-DOPED n+-GaAs WITH LOW COMPENSATION GROWN BY ATMOSPHERIC OMVPE

Author(s):

Publication title:

Advances in materials, processing, and devices in III-V compound semiconductors

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

144

Pub. Year:

1989

Page(from):

67

Page(to):

72

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

Language:

English

Call no.:

M23500/144

Type:

Conference Proceedings

Details

TDL ID:	ZA00015629
Series ID:	PA00000011
Conf. info. (Name):	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
Conf. info. (Number):	1988
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1988.11.28-1998.12.02

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