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TEM STUDY OF THE ANNEALING BEHAVIOR OF SECONDARY DEFECTS IN 1 MeV Si IMPLANTED GaAs

Author(s):
Publication title:
Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
138
Pub. Year:
1989
Page(from):
233
Page(to):
238
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990111 [1558990119]
Language:
English
Call no.:
M23500/138
Type:
Conference Proceedings

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