GAP STATE DISTRIBUTION AND INTERFACE STATES IN a-Si:H AND a-SiGe:H BY MODULATED PHOTOCURRENT

GAP STATE DISTRIBUTION AND INTERFACE STATES IN a-Si:H AND a-SiGe:H BY MODULATED PHOTOCURRENT

Author(s):

Publication title:

Amorphous silicon technology : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

118

Pub. Year:

1988

Page(from):

543

Page(to):

548

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837883 [093183788X]

Language:

English

Call no.:

M23500/118

Type:

Conference Proceedings

Details

TDL ID:	ZA00015603
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1988
Conf. info. (Venue):	Reno, NV, USA
Conf. info. (Date):	1988.04.05-1988.04.08

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