IMPROVED OFF-CHARACTERISTICS OF a-Si VERTICAL-TYPE MOSFETs

IMPROVED OFF-CHARACTERISTICS OF a-Si VERTICAL-TYPE MOSFETs

Author(s):

Publication title:

Amorphous silicon technology : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

118

Pub. Year:

1988

Page(from):

219

Page(to):

224

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837883 [093183788X]

Language:

English

Call no.:

M23500/118

Type:

Conference Proceedings

Details

TDL ID:	ZA00015603
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1988
Conf. info. (Venue):	Reno, NV, USA
Conf. info. (Date):	1988.04.05-1988.04.08

Similar Items:

1 Conference Proceedings a-Si FETS WITH IMPROVED ON/OFF CHARACTERISTICS Uchida, Y., Matsumura, M Materials Research Society	7 Conference Proceedings Electrical Characteristics of Deep-Submicron Vertical SiGe n-MOSFETs Liu, K.-C., Quinones, E.J., Chen, X., Anantharam, B., Chen, X.D., Ray, S.K., Oswal, S.K., Banerjee, S.K. Electrochemical Society
2 Conference Proceedings PREPARATION OF a-Si:H FILMS BY VHF PLASMA CVD Oda, S., Noda, J.’I., Matsumura, M. Materials Research Society	8 Conference Proceedings A HIGH-SPEED AMORPHOUS-SILICON DYNAMIC CIRCUIT Okada, H., Nara, Y., Uchida, Y., Watanabe, Y,, Matsumura, M. Materials Research Society
3 Conference Proceedings Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs Ohshima, T., Yoshikawa, M., Itoh, H., Kojima, K., Okada, S., Nashiyama, I. Trans Tech Publications	9 Conference Proceedings Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs Oshima, K., Cristoloveanu, S., Guillaumot, B., Carval, G.be, Lwai, H., Mazure, C., Kang, M.S., Rae, Y.H., Kwon, J.W., … Electrochemical Society
4 Conference Proceedings VERTICAL-TYPE a-Si:H FIELD-EFFECT TRANSISTORS Uchida, Y., Matsumura, M. North Holland	10 Conference Proceedings Optical fiber amplifier technologies for next-generation WDM transmissions Namiki,S., Sakano,M. SPIE-The International Society for Optical Engineering
5 Conference Proceedings The Vertical Replacement-Gate (VRG) MOSFET: A High-Performance, Vertical MOSFET with Lithography-Independent Critical Dimensions Hergenrother, J.M., Oh, S.H., Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A., Baumann, F.H., Grazul, J.L., Johnson, … Electrochemical Society	11 Conference Proceedings Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature M. Kato, Y. Nanen, J. Suda, T. Kimoto Trans Tech Publications
6 Conference Proceedings The Application of Solid Source Diffusion in the Vertical Replacement-Gate (VRG) MOSFET Oh, Sang-Hyun, Hergenrdther, Jack, Monroe, Don, Nigam, T., Klemens, F.P., Kornblit, A., Mansfield, W.M., Baumaun, F.H., … Materials Research Society	12 Conference Proceedings Optimum scaling theory to minimize the roll-off of threshold voltage for nanoscale MOSFET Lim, G.-S., Ko, S.-W., Kim, J.-H., Lee, J.-I., Jung, H.-K. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12