INFLUENCE OF STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF EXTENDED DEFECTS ON GaAs FIELD EFFECT TRANSISTORS

INFLUENCE OF STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF EXTENDED DEFECTS ON GaAs FIELD EFFECT TRANSISTORS

Author(s):

Publication title:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

104

Pub. Year:

1988

Page(from):

457

Page(to):

462

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

Language:

English

Call no.:

M23500/104

Type:

Conference Proceedings

Details

TDL ID:	ZA00015590
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in electronic materials
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.03

Similar Items:

1 Conference Proceedings Recent Advabeces in Microfabrication Van Rossum. M, Van Hove. M, De Raedt. W, De Potter. M, Jansen. P Plenum Press	7 Conference Proceedings lnP-Based HEMT Technology for MMIC Applications Van Hove, M., Finders, J., van der Zanden, K., De Raedt, W., Van Rossum, M., Baeyens, Y., Schreurs, D., Nauwelaers, B., … Electrochemical Society
2 Conference Proceedings STUDY OF THE INFLUENCE OF STRUCTURAL PROPERTIES ON Si AND Be DOPING OF HETEROEPITAXIAL InAsSb ON GaAs-COATED Si SUBSTRATES FOR INFRARED PHOTODIODES Boeck, De J., Dobbelaere, W., Van Hove, M., Vanhellemont, J., De Raedt, W., Vandervorst, W., Mertens, R., Borghs, G. Materials Research Society	8 Conference Proceedings SUBMICRON PSEUDOMORPHIC HEMT’s USING NON-ALLOYED OHMIC CONTACTS WITH CONTRAST ENHANCEMENT Jansen Ph., De raedt, W., Van Hove, M., Jonckhere, R., Pereira, R., Van Rossum, M. Materials Research Society
3 Conference Proceedings MULTI-STEP RAPID THERMAL ANNEALING TO IMPROVE THE STRUCTURAL AND ELECTRICAL PROPERTIES OF GaAs ON Si Zou, G., De Boeck, J., de Potter, M., Deneffe, K., de Wolf, I., Vanhellemont, J., Borghs, G., Van Rossum, M. Materials Research Society	9 Conference Proceedings OPTIMIZATION OF OHMIC CONTACTS ON LATTICE-MATCHED AND PSEUDOMORPHIC AlInAs/InGaAs/InP Hove, M. Van, Skrabka, T., Bender, H., Raedt, W. De, Rossum, M. Van, Baeyens, Y. MRS - Materials Research Society
4 Conference Proceedings SITE OCCUPATION OF IMPLANTED Te IN GaAs AS A FUNCTION OF IMPLANTATION DOSE Langouche, G., Schroyen, D., Bemelmans, H., Van Rossum, M., De Raedt, W., de Potter, M. Materials Research Society	10 Conference Proceedings GaAs on Si: Device Applications Rossum van M., Boeck De J., Potter De M., Borghs G. Kluwer Academic Publishers
5 Conference Proceedings Enhancement of the METAL/Si-DOPED AlGaAs schottky barrier height by CH4/H2 reactive ion etching Pereira, R., Hove, M. Van, Raedt, W. De, Alay, J., Bender, H., Vandervorst, W., Borghs, G., Rossum, M. Van MRS - Materials Research Society	11 Conference Proceedings DAMAGE INTRODUCED BY CH4/H2 REACTIVE ION ETCHING IN PSEUDOMORPHIC AlGaAs/InGaAs MODFETs Pereira, R., Van Hove, M., De Raedt, W., Van Hoof, C., Broghs, G., Van Rossum, M., Braspenning, R. H., Eijkemans, T. J., … Materials Research Society
6 Conference Proceedings Influence of CH4/H2 reactive ion etching on deep levels in Si-DOPED AlxGa1-xAs (x=0.25) Pereira, R., Hove, M. Van, Potter, M. de, Rossum, M. Van MRS - Materials Research Society	12 Conference Proceedings Mossbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGal-XAS Langouche,G., Bemelmans,H., Odeurs,J., Borghs,G., Potter,M.De, Deraedt,W., Rossum,M.Van Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12