ON THE ROLE OF INTERFACIAL DEFECT SITES DURING SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED SILICON

ON THE ROLE OF INTERFACIAL DEFECT SITES DURING SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED SILICON

Author(s):

Publication title:

Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

100

Pub. Year:

1988

Page(from):

447

Page(to):

452

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837685 [0931837685]

Language:

English

Call no.:

M23500/100

Type:

Conference Proceedings

Details

TDL ID:	ZA00015586
Series ID:	PA00000011
Conf. info. (Name):	Symposium on fundamentals of beam-solid interactions and transient thermal processing
Conf. info. (Number):	1987
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1987.11.30-1987.12.03

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