EFFECTS OF THE SUBSEQUENT ION IRRADIATION ON THE FORMATION PROCESS OF β-SiC FROM Si-c MIXTURES FABRICATED ON Si BY ION IMPLANTATION

EFFECTS OF THE SUBSEQUENT ION IRRADIATION ON THE FORMATION PROCESS OF β-SiC FROM Si-c MIXTURES FABRICATED ON Si BY ION IMPLANTATION

Author(s):

Publication title:

Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

97

Pub. Year:

1987

Page(from):

289

Page(to):

294

Pages:

6

Pub. info.:

Pittsburgh, Penn.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837647 [0931837642]

Language:

English

Call no.:

M23500/97

Type:

Conference Proceedings

Details

TDL ID:	ZA00015583
Series ID:	PA00000011
Conf. info. (Name):	Symposium on novel refractory semiconductors
Conf. info. (Number):	1987
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1987.04.21-1987.04.23

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