MESOTAXY: SINGLE-CRYSTAL GROWTH OF BURIED SILICIDE LAYERS
- Author(s):
- Publication title:
- Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 93
- Pub. Year:
- 1987
- Page(from):
- 93
- Page(to):
- 98
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837609 [093183760X]
- Language:
- English
- Call no.:
- M23500/93
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Materials Research Society |
Materials Research Society |
8
Conference Proceedings
THE GROWTH OF EPITAXIAL NiSi2 SINGLE CRYSTALS ON SILICON BY THE USE OF TEMPLATE LAYERS
North-Holland |
Materials Research Society |
9
Conference Proceedings
COMPARISON OF CONDUCTIVITY PRODUCED IN POLYMERS AND CARBON FILMS BY PYROLYSIS AND HIGH ENERGY ION IRRADIATION
North-Holland |
Materials Research Society |
10
Conference Proceedings
ION-BEAM-INDUCED DESTRUCTION OF SUPERCONDUCTING PHASE COHERENCE IN YBa2Cu3O7-δ
Materials Research Society |
Materials Research Society |
11
Conference Proceedings
EVOLUTION OF BURIED COBALT SILICIDE LAYERS FORMED BY Co IMPLANTATION IN Si(111)
Materials Research Society |
6
Conference Proceedings
MESO-EPITAXY: EPITAXIAL GROWTH OF SILICON OVER BURIED SINGLE CRYSTAL CoSi2 LAYERS
Materials Research Society |
Materials Research Society |