THE EFFECT OF RAPID THERMAL TREATMENT ON THE STRUCTURAL OPTOELECTRONIC PROPERTIES OF EPITAXIAL GaAs ON Si GROWN WITH OR WITHOUT Ge INTERMEDIATE LAYERS

THE EFFECT OF RAPID THERMAL TREATMENT ON THE STRUCTURAL OPTOELECTRONIC PROPERTIES OF EPITAXIAL GaAs ON Si GROWN WITH OR WITHOUT Ge INTERMEDIATE LAYERS

Author(s):

Lee, El-Hang

Publication title:

Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

92

Pub. Year:

1987

Page(from):

347

Page(to):

352

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837593 [0931837596]

Language:

English

Call no.:

M23500/92

Type:

Conference Proceedings

Details

TDL ID:	ZA00015578
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal processing of electronic materials
Conf. info. (Number):	1987
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1987.04.21-1987.04.23

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