*HETEROEPITAXIAL Si-, Ge-, AND GaAs-ON-INSULATOR STRUCTURES ON Si SUBSTRATES BY USE OF FLOURIDE INSULATORS
- Author(s):
- Publication title:
- Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 91
- Pub. Year:
- 1987
- Page(from):
- 337
- Page(to):
- 348
- Pages:
- 12
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837586 [0931837588]
- Language:
- English
- Call no.:
- M23500/91
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
* FORMATION OF EPITAXIAL SOl STRUCTURES USING ALKALINE EARTH FLUORIDE FILMS
Materials Research Society |
2
Conference Proceedings
EXPITAXIAL RELATIONS IN FLUORIDE FILMS GROWN ON GaAs (111) AND Ge (111) SUBSTRATES
Materials Research Society |
North-Holland |
Materials Research Society |
9
Conference Proceedings
HETEROEPITAXIAL GROWTH OF HIGH QUALITY GaAs FILMS ON RAPID-THERMAL-ANNEALING PROCESSED CaF2/Si (511) STRUCTURES
Materials Research Society |
Kluwer Academic Publishers |
Materials Research Society |
Materials Research Society |
11
Conference Proceedings
HETEROEPITAXIAL GROWTH OF InP AND GaInAs ON GaAs SUBSTRATES USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE
Materials Research Society |
Materials Research Society |
12
Conference Proceedings
CONTROL OF THE INITIAL STAGE OF Ge OVERGROTH ON CaF2/Si STRUCTURE BY ELECTRON BEAM EXPOSURE
Materials Research Society |