Blank Cover Image

LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si

Author(s):
Wilson, B. A.
Bonner, C. E.
Harris, T. D.
Lamont, M. G.
Miller, R. C
Sputz, S. K.
Vermon, S. M.
Haven, V. E.
Lum,. R. M.
Klingert, J. K.
5 more
Publication title:
Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
91
Pub. Year:
1987
Page(from):
255
Page(to):
260
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837586 [0931837588]
Language:
English
Call no.:
M23500/91
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings BAND-EDGE LUMINESCENCE OF MOCVD GaAs GROWN DIRECTLY ON SILICON

Lamont, M. G., Harris, T. D., Sauer, R., Lum, R. M., Klingert, J. K.

Materials Research Society
7 Conference Proceedings RESONANT PHOTOLUMINESCENCE EXCITATION IN GaAs GROWN DIRECTLY ON Si

Zemon, S., Jagannath, C., Shastry, S.K., Miniscalco, W.J., Lambert, G.

Materials Research Society
2 Conference Proceedings NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP

Schnoes, Lamoni M., Harris, T. D., Hobson, W. S., Lum., R. M., Klingent, J. K.

Materials Research Society
8 Conference Proceedings COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY …

Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L.

Materials Research Society
3 Conference Proceedings IMPROVED MOCVD GROWTH OF GaAs ON Si

Lum, R. M., Klingert, J. K., Davidson, B,. A., Lamont, M. G.

Materials Research Society
9 Conference Proceedings PROPERTIES OF MBE GROWN HETEROSTRUCTURES OF GaAs/InSb AND InP/InSb

Asom, M. T., Fitzgerald,m E. A., Thiel,. F. A., People, R,., Eaglesham. D., Luther, L., Sputz, S. K., Kimerling, L. C.

Materials Research Society
4 Conference Proceedings Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source

Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, …

Trans Tech Publications
10 Conference Proceedings CHARACTERIZATION OF GaAs GROWN BY DIRECT DEPOSITION ON Si

Vernon, S. M., Pearton, s. J., Gibson, J. M., Caruso, R., Abernathy, C. R., Short, K. T., Stavola, M., Haven, V. E., …

Materials Research Society
5 Conference Proceedings COMPARISON OF LOW VAPOR PRESSURE ORGANOARSENIC COMPOUNDS FOR MOVPE GROWTH OF GaAs

Lum, R. M., Klingert, J. K.

Materials Research Society
11 Conference Proceedings ATOMIC LAYER EPITAXY OG GaAs ON Si BY MOCVD

Karam, N. H., Haven, V. E., Vermon,. S. M., Tan, J. C., El-Masry, N. A.

Materials Research Society
6 Conference Proceedings PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF GaAS GROWN DIRECTLY ON Si

Zemon, S, Shastry, S.K., Norris, P., Jagannath, C., Lambert, G

Materials Research Society
12 Conference Proceedings *ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III-V MATERIALS

Lum, R. M., Klingert, J. K.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12