EFFECTS OF BORON IMPLANTATION OF SILICON DIOXIDE PASSIVATED HgCdTe
- Author(s):
- Publication title:
- Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 90
- Pub. Year:
- 1987
- Page(from):
- 279
- Page(to):
- 286
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837555 [0931837553]
- Language:
- English
- Call no.:
- M23500/90
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
PHOTOASSISTED DEPOSITION OF SILICON DIOXIDE FROM SILANE AND NITROGEN DIOXIDE
Materials Research Society |
Materials Research Society |
8
Conference Proceedings
INFLUENCE OF ION-IMPLANTATION ON CHARACTERISTICS OF PICOSECOND PHOTOCONDUCTIVE SWITCHES
Materials Research Society |
Materials Research Society |
9
Conference Proceedings
*FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OF HYDROGEN-PASSIVATED BORON IN SILICON
Materials Research Society |
4
Conference Proceedings
EFFECTS OF HELIUM ION IMPLANTATION ON THE OPTICAL AND CRYSTAL PROPERTIES OF GaAs
Materials Research Society |
Materials Research Society |
Materials Research Society |
11
Conference Proceedings
The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon
Materials Research Society |
6
Conference Proceedings
X-RAY AND RAMAN TOPOGRAPHIC STUDIES OF GaAs IMPLANTED WITH 28Si+ AND PULSED LASER ANNEALED
Materials Research Society |
North-Holland |