*ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES

*ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES

Author(s):

Publication title:

Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

90

Pub. Year:

1987

Page(from):

199

Page(to):

208

Pages:

10

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837555 [0931837553]

Language:

English

Call no.:

M23500/90

Type:

Conference Proceedings

Details

TDL ID:	ZA00015576
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials for infrared detectors and sources
Conf. info. (Number):	1986
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1986.12.01-1986.12.05

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