CHARACTERIZATION OF EXCIMER LASER DEPOSITED GaAS FILMS FROM THE PHOTOLYSIS OF TRIMETHYLGALLIUM AND TRIMETHYLARSINE AT 193 nm.
- Author(s):
- Publication title:
- Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 75
- Pub. Year:
- 1987
- Page(from):
- 223
- Page(to):
- 232
- Pages:
- 10
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837418 [0931837413]
- Language:
- English
- Call no.:
- M23500/75
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
PRODUCTION OF ELECTRONICALLY EXCITED P2 AND In FROM ArF EXCIMER LASER IRRADIATION OF InP
Materials Research Society |
7
Conference Proceedings
Compaction and rarefaction of fused silica with 193-nm excimer laser exposure
SPIE-The International Society for Optical Engineering |
2
Conference Proceedings
LASER INDUCED DECOMPOSITION OF TRIETHYLGALLIUM AND TRIMETHYLGALLIUM ADSORBED ON GaAs (100)
Materials Research Society |
8
Conference Proceedings
Reactions of C2(X1ヲイg+) and (a3IIi) Produced by Multiphoton UV Excimer Laser Photolysis
American Chemical Society |
3
Conference Proceedings
EFFECTS OF EXCIMER LASER IRRADIATION ON MBE AND MO-MBE GROWTHS OF (Al)GaAs ON GaAs AND (Ca,Sr)F2/GaAs SUBSTRATES
Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
6
Conference Proceedings
*SELECTED AREA GROWTH OF GaASs BY LASER INDUCED PYROLYSIS OF ADSORBED Ga-ALKYLS
Materials Research Society |
Materials Research Society |