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THE EFFECT OF HC1 ON SILICON POINT DEFECT FORMATION DURING THERMAL OXIDATION OF (100) FLOAT ZONE SILICON WAFERS: A THEORETICAL ANALYSIS

Author(s):
Publication title:
Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
71
Pub. Year:
1986
Page(from):
39
Page(to):
46
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837371 [0931837375]
Language:
English
Call no.:
M23500/71
Type:
Conference Proceedings

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