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REACTIVE ION ETCHING MODEL FOR SILICON DIOXIDE

Author(s):
Fortuno, Guadalupe  
Publication title:
Plasma processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
68
Pub. Year:
1986
Page(from):
261
Page(to):
266
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837340 [0931837340]
Language:
English
Call no.:
M23500/68
Type:
Conference Proceedings

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