THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY

THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Heteroepitaxy on silicon : symposium held April 16-18, 1986, Palo Alto, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

67

Pub. Year:

1986

Page(from):

37

Page(to):

44

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837333 [0931837332]

Language:

English

Call no.:

M23500/67

Type:

Conference Proceedings

Details

TDL ID:	ZA00015553
Series ID:	PA00000011
Conf. info. (Name):	Symposium on heteroepitaxy on silicon
Conf. info. (Number):	1986
Conf. info. (Venue):	Palo Alto, CA, USA
Conf. info. (Date):	1986.04.16-1986.04.18

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