GETTERING OF IMPURITIES IN SEMICONDUCTORS

GETTERING OF IMPURITIES IN SEMICONDUCTORS

Author(s):: Ourmazd, A.
Publication title:: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 59
Pub. Year:: 1986
Page(from):: 331
Page(to):: 340
Pages:: 10
Pub. info.:: Pittsburgh, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9780931837241 [0931837243]
Language:: English
Call no.:: M23500/59
Type:: Conference Proceedings

Details

TDL ID:	ZA00015545
Series ID:	PA00000011
Conf. info. (Name):	Symposium on oxygen, carbon, hydrogen, and nitrogen in crystalline silicon
Conf. info. (Number):	1985
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1985.12.02-1985.12.05

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