NEW SUPERLATTICE ARCHITECTURE IN III-V COMPOUND SEMICONDUCTORS VIA CONTROL OF EPITAXY ON AN ATOMIC SCALE
- Author(s):
- Petroff, P.M.
- Publication title:
- Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 56
- Pub. Year:
- 1985
- Page(from):
- 19
- Page(to):
- 26
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837210 [0931837219]
- Language:
- English
- Call no.:
- M23500/56
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Luminescence properties of GaAs epitaxial layers grown by liquid phase epitaxy and molecular beam epitaxy
North Holland |
Plenum Press |
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Chemical Identification of the Atomic Scale in MBE-Grown III-V Alloy Semiconductors
Trans Tech Publications |
Materials Research Society |
North-Holland |
Materials Research Society |
10
Conference Proceedings
*ATOMIC LAYER EPITAXY OF WIDE BANDGAP II-VI COMPOUND SEMICONDUCTOR SUPERLLATICES
Materials Research Society |
5
Conference Proceedings
Physics and materials issues behind the lifetime problem in semiconductor lasers and light-emitting diodes
SPIE-The International Society for Optical Engineering |
Materials Research Society |
6
Conference Proceedings
Growth and properties of self assembling quantum dots in III/V compound semiconductors
Kluwer Academic Publishers |
Electrochemical Society |