EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERS FORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION

EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERS FORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION

Author(s):

Publication title:

Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

53

Pub. Year:

1985

Page(from):

257

Page(to):

262

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837180 [0931837189]

Language:

English

Call no.:

M23500/53

Type:

Conference Proceedings

Details

TDL ID:	ZA00015539
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor-on-insulator and thin film transistor technology
Conf. info. (Number):	1985
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1985.12.03-1985.12.06

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