BURIED OXIDE IN SILICON BY OXYGEN IMPLANTATION INTO SCANNED WAFERS
- Author(s):
- Publication title:
- Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 45
- Pub. Year:
- 1985
- Page(from):
- 305
- Page(to):
- 310
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837104 [0931837103]
- Language:
- English
- Call no.:
- M23500/45
- Type:
- Conference Proceedings
Similar Items:
North-Holland |
7
Conference Proceedings
MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs ON SILICON WITH BURIED IMPLANTED OXIDES
Materials Research Society |
2
Conference Proceedings
CRITICAL CURRENT DENSITY AND MICROSTRUCTURE OF YBa2Cu3O7-X FILMS AS A FUNCTION OF FILM THICKNESS
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
Synthesis of a buried oxide in related Si0.5Ge0.5 material using high energy oxygen implantation
Electrochemical Society |
5
Conference Proceedings
CRYSTALLINE TO AMORPHOUS TRANSFORMATION OF Fe3B BY 1 MeV ELECTRON IRRADIATION
North-Holland |
11
Conference Proceedings
Silicon Wafer Direct Bonding for Smart-Cut SOI with Buried Tungsten Silicide Layer
Electrochemical Society |
6
Conference Proceedings
AN INVESTIGATION OF BURIED LAYER FORMATION BY 40keV OXYGEN IMPLANTATION INTO SILICON
Materials Research Society |
Materials Research Society |