ELECTRICAL CHARACTERIZATION OF ION IMPLANTED, THERMALLY ANNEALED TiN FILMS ACTING AS DIFFUSION BARRIERS ON SHALLOW JUNCTION SILICON DEVICES

ELECTRICAL CHARACTERIZATION OF ION IMPLANTED, THERMALLY ANNEALED TiN FILMS ACTING AS DIFFUSION BARRIERS ON SHALLOW JUNCTION SILICON DEVICES

Author(s):

Armigliato, A.

Publication title:

Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

45

Pub. Year:

1985

Page(from):

183

Page(to):

188

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837104 [0931837103]

Language:

English

Call no.:

M23500/45

Type:

Conference Proceedings

Details

TDL ID:	ZA00015534
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ion beam processes in advanced electronic materials and device technology
Conf. info. (Number):	1985
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1985.04.15-1985.04.18

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