Blank Cover Image

1-3 MeV B+ AND B+ IMPLANTS FOR C-MOS TECHNOLOGY

Author(s):
Publication title:
Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
45
Pub. Year:
1985
Page(from):
115
Page(to):
122
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837104 [0931837103]
Language:
English
Call no.:
M23500/45
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings MICROSTRUCTURAL DEVELOPMENT OF TiB2 ION IMPLANTED WITH 1 MEV NICKEL

Sklad, P. S., Angelini, P., Lewis, M. B., McHargue, C. J.

North-Holland
7 Conference Proceedings MESOTAXY LAYERS OF IrSi3 IN (111)Si FORMED BY MeV ION IMPLANTATION

Short, K. T., White, Alice E., Eaglesham, D. J., Jacobson, D. C., Poate, J. M.

Materials Research Society
2 Conference Proceedings Smart-Cut Technology: An Industrial Application of Ion-Implantation-Induced Cavities

Aspar, B., Lagahe, C., Moriceau, H., Soubie, A., Bruel, M., Auberton-Herve, A. J., Barge, T., Maleville, C.

MRS - Materials Research Society
8 Conference Proceedings ION BEAM SYNTHESIS OF IrSi3 BY IMPLANTATION OF 2 MeV Ir IONS+

Sjoreen, T.P., Hinneberg, H.-J., Chisholm, M.F.

Materials Research Society
3 Conference Proceedings IMPLANTATION INDUCED FILAMENTARY STRUCTURES

Jaussaud, C., Maillot, B., Bruel, M.

North-Holland
9 Conference Proceedings Structural and Optical Properties of Rare-Earth Doped Lithium Niobate Waveguides Formed by MeV Helium Implantation

Herreros, B., Lifante, G., Cusso, F., Kling, A., Soares, J. C., Silva, M. F. da, Townsend, P. D., Chandler, P. J.

MRS - Materials Research Society
4 Conference Proceedings The Effect of the Extra Ion on Residual Damage in MeV-Implanted Si

Libertino, S., Benton, J. L., Coffa, S., Jacobson, D. C., Eaglesham, D. J., Poate, J. M., Lavalle, M., Fuochi, P. G.

MRS - Materials Research Society
10 Conference Proceedings Current Challenges in Ge MOS Technology

A. Dimoulas, M. Houssa, A. Ritenour, J. Fompeyrine, W. Tsai, J. Seo, Y. Panayiotatos, P. Tsipas, D. P. Brunco, M. R. …

Electrochemical Society
5 Conference Proceedings CHARACTERISTICS OF 56 MeV OXYGEN IMPLANTATION INTO Si AND III-V SEMICONDUCTORS

Pearton, S.J., Jalali, B., Poate, J.M., Fox, J.D., Kemper, K.W., Magee, C.W., Jones, K.S.

Materials Research Society
11 Conference Proceedings The benefit of SOI technologies for low-voltage RFID applications

Viliard, P., Jomaah, J., Gomez, B., De Pontcharra, J., Save, D., Chouteau, S., Mackowiak, E.

Electrochemical Society
6 Conference Proceedings Single-Crystal Semiconductor Layer Delamination and Transfer Through Hydrogen Implantation

Bruel, M., Aspar, B., Moriceau, H., Jalaguier, E., Lagahe, C.

Electrochemical Society
12 Conference Proceedings ION BEAM SYNTHESIS OF IrSi3 BY 1-MeV Ir ION IMPLANTATION INTO Si(111)

Sjoreen, T. P., Hinneberg, H.-J.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12