DEFECT STATES IN GaAs AFTER RAPID THERMAL ANNEALING
- Author(s):
- Publication title:
- Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 46
- Pub. Year:
- 1985
- Page(from):
- 333
- Page(to):
- 338
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837111 [0931837111]
- Language:
- English
- Call no.:
- M23500/46
- Type:
- Conference Proceedings
Similar Items:
North Holland |
7
Conference Proceedings
DEFECT STATES INDUCED BY RAPID THERMAL ANNEALING IN VIRGIN OR IMPLANTED CZOCHRALSKY-GROWN SILICON
Materials Research Society |
Materials Research Society |
Materials Research Society |
North-Holland |
Materials Research Society |
Materials Research Society |
Materials Research Society |
North-Holland |
Materials Research Society |
Materials Research Society |
12
Conference Proceedings
Deep Level Defects in GaN Characterized by Capacitance Transient Spectroscopies
MRS - Materials Research Society |