EFFECT OF HEAVY DOPING ON THE NUCLEATION AND GROWTH OF BULK STACKING FAULTS IN SILICON

EFFECT OF HEAVY DOPING ON THE NUCLEATION AND GROWTH OF BULK STACKING FAULTS IN SILICON

Author(s):

Publication title:

Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

36

Pub. Year:

1985

Page(from):

231

Page(to):

238

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837012 [0931837014]

Language:

English

Call no.:

M23500/36

Type:

Conference Proceedings

Details

TDL ID:	ZA00015522
Series ID:	PA00000011
Conf. info. (Name):	Symposium on impurity diffusion and gettering in silicon
Conf. info. (Number):	1984
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1984.11.26-1984.11.30

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