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FORMATION OF OXIDE LAYERS BY HIGH DOSE IMPLANTATION INTO SILICON

Author(s):
Publication title:
Ion implantation and ion beam processing of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
27
Pub. Year:
1984
Page(from):
275
Page(to):
280
Pages:
6
Pub. info.:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008695 [0444008691]
Language:
English
Call no.:
M23500/27
Type:
Conference Proceedings

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