Epitaxial growth of NiSi2 on (O11)Si
- Author(s):
- Publication title:
- Thin films and interfaces II : symposium held November 1983, in Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 25
- Pub. Year:
- 1984
- Page(from):
- 447
- Page(to):
- 454
- Pages:
- 8
- Pub. info.:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444009050 [0444009051]
- Language:
- English
- Call no.:
- M23500/25
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Materials Research Society |
Materials Research Society |
North-Holland |
North-Holland |
9
Conference Proceedings
THE GROWTH OF EPITAXIAL NiSi2 SINGLE CRYSTALS ON SILICON BY THE USE OF TEMPLATE LAYERS
North-Holland |
Materials Research Society |
10
Conference Proceedings
EPITAXIAL GROWTH OF NiSi2 AND GoSi2 ON LATERALLY CONFINED SILICON BY RAPID THERMAL ANNEALING
Materials Research Society |
Materials Research Society |
Plenum Press |
Materials Research Society |
12
Conference Proceedings
STRUCTURAL CHARACTERIZATION AND SCHOTTKY BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NiSi2 ON Si
Materials Research Society |