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*FORMATION OF BURIED OXIDE IN SILICON BY HIGH-DOSE OXYGEN IMPLANTATION, AND APPLICATION OF THIS TECHNOLOGY TO CMOS DEVICES

Author(s):
Publication title:
Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
23
Pub. Year:
1984
Page(from):
443
Page(to):
452
Pages:
10
Pub. info.:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444009036 [0444009035]
Language:
English
Call no.:
M23500/23
Type:
Conference Proceedings

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