High pressure thermodynamics and solution growth of GaN
- Author(s):
- Publication title:
- General topics
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 22(3)
- Pub. Year:
- 1984
- Page(from):
- 73
- Page(to):
- 76
- Pages:
- 4
- Pub. info.:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444009319 [0444009310]
- Language:
- English
- Call no.:
- M23500/22-3
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
MRS - Materials Research Society |
2
Conference Proceedings
*HIGH ACTIVE GAS (O OR N2) PRESSURE CRYSTAL GROWTH AND PHASE DIAGRAM OF YBaCuO PHASES AND GaN
Materials Research Society |
American Institute of Chemical Engineers |
3
Conference Proceedings
Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method (Invited Paper) [6121-02]
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
4
Conference Proceedings
Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
MRS - Materials Research Society |
10
Conference Proceedings
Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy
MRS - Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |