ENCHANCED InP SUBSTRATE PROTECTION FOR LPE GROWTH OF InGaAsP DOUBLE HETEROSTRUCTURE LASERS,

ENCHANCED InP SUBSTRATE PROTECTION FOR LPE GROWTH OF InGaAsP DOUBLE HETEROSTRUCTURE LASERS,

Author(s):

Besomi, P.
Wilson, R. B.
Wagner, W. R.
Nelson, R. J. ( Bell Laboratories, Murray Hill, NJ )

Publication title:

Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

14

Pub. Year:

1983

Page(from):

289

Page(to):

294

Pages:

6

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008121 [0444008128]

Language:

English

Call no.:

M23500/14

Type:

Conference Proceedings

Details

TDL ID:	ZA00015498
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1982.11.00

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