CW LASER ANNEALING OF ION IMPLANTED OXIDIZED SILICON LAYERS ON SAPPHIRE
- Author(s):
- Publication title:
- Laser-solid interactions and transient thermal processing of materials : symposium held November 1982 in Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 13
- Pub. Year:
- 1983
- Page(from):
- 517
- Page(to):
- 522
- Pages:
- 6
- Pub. info.:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444007889 [0444007881]
- Language:
- English
- Call no.:
- M23500/13
- Type:
- Conference Proceedings
Similar Items:
North Holland |
North Holland |
Materials Research Society |
8
Conference Proceedings
Calculations pertaining to Raman scattering during laser annealing of ion-implanted silicon
North Holland |
3
Conference Proceedings
Light absorption effects on the Nd laser annealing of ion implanted silicon
North Holland |
9
Conference Proceedings
PULSED EXCIMER LASER (308 nm) ANNEALING OF ION IMPLANTED SILICON AND SOLAR CELL FABRICATION
North-Holland |
Materials Research Society |
North-Holland |
5
Conference Proceedings
Study of Structure and Electrical Characteristics of Silicon Oxynitride Layers Synthesized by Dual Ion Implantation in Silicon and their Annealing Behaviour
Electrochemical Society |
11
Conference Proceedings
TRANSIENT ANNEALING OF ION-IMPLANTED SILICON USING A SCANNING IR LINE SOURCE
North-Holland |
Materials Research Society |
12
Conference Proceedings
Photoluminescence and Raman Studies of Silicon Ion Implantation Annealing in GaAs
SPIE - The International Society for Optical Engineering |