Preparation and Characterization of ZnO Film on Si(111) Substrate with SiC Buffer Layer Deposited by MOCVD

Preparation and Characterization of ZnO Film on Si(111) Substrate with SiC Buffer Layer Deposited by MOCVD

Author(s):

Publication title:

State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-04

Pub. Year:

2005

Page(from):

443

Page(to):

448

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774628 [1566774624]

Language:

English

Call no.:

E23400/200504

Type:

Conference Proceedings

Details

TDL ID:	ZA00015409
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Compound-Semiconductor/Solution Interface ; Meeting of the Electrochemical Society
Conf. info. (Number):	42nd ; 2005 ; 207th
Conf. info. (Venue):	Quebec City, Canada
Conf. info. (Date):	2005.05.15-2005.05.20

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