Nitrogen Incorporation in GaAsN Grown by Chemical Beam Epitaxy

Nitrogen Incorporation in GaAsN Grown by Chemical Beam Epitaxy

Author(s):

Oshita, Y.

Publication title:

State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-04

Pub. Year:

2005

Page(from):

272

Page(to):

277

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774628 [1566774624]

Language:

English

Call no.:

E23400/200504

Type:

Conference Proceedings

Details

TDL ID:	ZA00015409
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Compound-Semiconductor/Solution Interface ; Meeting of the Electrochemical Society
Conf. info. (Number):	42nd ; 2005 ; 207th
Conf. info. (Venue):	Quebec City, Canada
Conf. info. (Date):	2005.05.15-2005.05.20

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