HIGH PERFORMANCE NMOSFET WITH HFSIX/HFO2 GATE STACK BY LOW TEMPERATURE PROCESS | 東京工業大学附属図書館文献データベース

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HIGH PERFORMANCE NMOSFET WITH HFSIX/HFO2 GATE STACK BY LOW TEMPERATURE PROCESS

Author(s):

Publication title:

Semiconductor technology (ISTC 2006) : proceedings of the 5th International Conference on Semiconductor Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2006-03

Pub. Year:

2006

Page(from):

330

Page(to):

336

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774376 [1566774373]

Language:

English

Call no.:

E23400/200603

Type:

Conference Proceedings

Details

TDL ID:	ZA00015408
Series ID:	PA00000028
Conf. info. (Name):	International Conference on Semiconductor Technology
Conf. info. (Number):	5th
Conf. info. (Venue):	Shanghai, China
Conf. info. (Date):	2006.03.21-2006.03.23

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