(6.2) 11:05 - 11:35 AM - Strain Relaxation in Narrow Width Strained Silicon Devices with Poly and Metal Gates (Invited)

(6.2) 11:05 - 11:35 AM - Strain Relaxation in Narrow Width Strained Silicon Devices with Poly and Metal Gates (Invited)

Author(s):

Publication title:

SiGe: materials, processing, and devices : proceedings of the First international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-07

Pub. Year:

2004

Page(from):

459

Page(to):

470

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774208 [1566774209]

Language:

English

Call no.:

E23400/200407

Type:

Conference Proceedings

Details

TDL ID:	ZA00015397
Series ID:	PA00000028
Conf. info. (Name):	SiGe: Materials, Processing, and Devices Symposium ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochemical Society of Japan
Conf. info. (Number):	1st ; 206th ; 2004
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

Similar Items:

1 Conference Proceedings (6.1) 10:35 - 11:05 AM - SiGe MODFETs: Overview and Issues for Sub-100 nm Gate-Length Scaling (Invited) Koester, S. J., Chu, J. O., Saenger, K. L., Ouyang, Q. C., Ott, J. A., Canaperi, D. F., Tornello, J. A., Jahnes, C. V. … Electrochemical Society	7 Conference Proceedings (11.1) 3:10 - 3:40 PM - Strained Silicon on Relaxed SiGe Made by Ion Implantation and Strain Transfer (Invited) Mantl, S., Buca, D. M., Hollander, B., Morschbacher, M., Trinkaus, H., Luysberg, M., Hueging, N., Carius, L. Houben'R., … Electrochemical Society
2 Conference Proceedings Multiple Gate MOSFETs W. P. Maszara, Z. Krivokapic, Q. Xiang, M. Lin Electrochemical Society	8 Conference Proceedings (6.3) 11:35 - 11:55 AM - Schottky Barrier Height Engineering with a Strained-Si channel for Sub-50nm Gate Schottky Source/Drain MOSFETs Ikeda, K., Yamashita, Y., Endoh, A., Hikosaka, K., Mimura, T. (Fujitsu) Electrochemical Society
3 Conference Proceedings Dielectrics in SI Nano-Devices: Roles and Challenges Xiang, Q., Krivokapic, Z., Maszara, W., Lin, M. -R. Electrochemical Society	9 Conference Proceedings (16.2) 3:35 - 4:05 PM - Industrial Applications of Poly-Silicon-Germanium as Functional MEMS Material Fuchs, T., Leinenbach, C., Kronmueller, S., Laermer, F., Thomas, T., Robb, K., Seidel, H., Frey, W. (R. Bosch GmbH) Electrochemical Society
4 Conference Proceedings (18.4) 11:15 - 11:35 AM - Preparation and Evaluation of NiGe Gate Electrodes for Metal-Oxide-Semiconductor Devices Kaneko, Y., Kondo, H., Sakai, A., Zaitna, S., Yasuda, Y. (CCRAST Nagoya Univ) Electrochemical Society	10 Conference Proceedings A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture Mirabedini, M. R., Li, V. Z-Q., Acker, A. R., Kuehn, R. T., Venables, D., Ozturk, M. C., Wortman, J. J. MRS - Materials Research Society
5 Conference Proceedings Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe Crosby, R.T., Jones, K.S., Law, M.E., Saavedra, A.F., Hansen, J.L., Larsen, A.N., Liu, J. Materials Research Society	11 Conference Proceedings Effect of Strontium and T6 Heat Treatment on Structure and Performance of Al-11.6Si-0.5Mg Alloy J.X. Lin, J.P. Zhang, L.Y. Niu, D.R. Sun, Z.M. Shi Trans Tech Publications
6 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J. Electrochemical Society	12 Conference Proceedings Atomic Layer Deposition of High-κ/Metal Gate Stack MOSFET-Devices on Strained Silicon-on-Insulator Substrates C. Henkel, S. Abermann, O. Bethge, M. Reiche, E. Bertagnolli Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12