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(4.25) 8:37 - 8:40 PM - Low Frequency Noise Mechanisms in Si and Pseudomorphic SiGe p-Channel Field-Effect Transistors

Author(s):
Prest, M. J.
Fulgoni, D. J. F.
Bacon, A. R.
Grasby, T. J.
Parker, E. H. C.
Whall, T. E. (U. Warwick)
1 more
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. Year:
2004
Page(from):
327
Page(to):
334
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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