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(3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor

Author(s):
Chidambaram, P.
Smith, B.
Hall, L.
Bu, H.
Chakravarthi, S.
Kim, Y.
Samoilov, A.
Kim, A.
Jones, P.
Irwin, R.
Kim, M.
Machala, C.
Grider, D.(Texas Instruments)
8 more
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. Year:
2004
Page(from):
123
Page(to):
134
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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