Electrical Properties for InN Grown by Molecular Beam Epitaxy

Electrical Properties for InN Grown by Molecular Beam Epitaxy

Author(s):

Schaff, W.J.

Publication title:

State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-06

Pub. Year:

2004

Page(from):

358

Page(to):

371

Pages:

14

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774192 [1566774195]

Language:

English

Call no.:

E23400/200406

Type:

Conference Proceedings

Details

TDL ID:	ZA00015396
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; State-of-the-Art Program on Compound Semiconductors ; Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 41st ; 206th
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	2004.10.03-2004.10.08

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